A monolithic SI PCS-CDMA power amplifier with an impedance-controllable biasing scheme

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 217-220

  Luo, S ^a   Sowlati, T ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC IMPEDANCE; ELECTRIC VARIABLES CONTROL; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC INTEGRATED CIRCUITS; PERSONAL COMMUNICATION SYSTEMS; SEMICONDUCTING SILICON;

ADJACENT-CHANNEL-POWER RATIO; BICMOS PROCESS; IMPEDANCE CONTROLLABLE BIASING SCHEME; POWER ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0034870744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9GHz
2. A monolithic 2.5V, 1W silicon bipolar power amplifier with 55% PAE at 1.9GHz
3. A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications
4. A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications
5. Bias boosting technique for a 1.9GHz class AB RF amplifier
6. High-frequency amplifier circuit with independent control of quiescent current and bias impedance