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Volumn 640, Issue , 2001, Pages
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Difference in secondary defects between high energy B+ and Al+ implanted 4H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
AGGLOMERATION;
ALUMINUM;
BORON;
DISLOCATIONS (CRYSTALS);
ION IMPLANTATION;
LATTICE CONSTANTS;
TRANSMISSION ELECTRON MICROSCOPY;
INTERSTITIALS;
LATTICE STRAIN;
SECONDARY DEFECTS;
SILICON CARBIDE;
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EID: 0034869616
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (5)
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