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Volumn , Issue , 2000, Pages 255-258
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High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsets
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CODE DIVISION MULTIPLE ACCESS;
GATES (TRANSISTOR);
HETEROJUNCTIONS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
LEAKAGE CURRENTS;
MULTICHIP MODULES;
NATURAL FREQUENCIES;
OPTIMIZATION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
ALUMINUM GALLIUM ARSENIDES;
POWER AMPLIFIERS;
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EID: 0034442939
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/gaas.2000.906334 Document Type: Conference Paper |
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Times cited : (12)
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References (2)
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