Channel width and length dependent flicker noise characterization for n-MOSFETs

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2001, Pages 257-261

  Aoki, H ^a   Shimasue, M ^a  

^a YOKOGAWA ANALYTICAL SYSTEMS INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMMUNICATION CHANNELS (INFORMATION THEORY); COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); SIGNAL NOISE MEASUREMENT;

DRAIN CURRENT NOISE DENSITY MEASUREMENT; FLICKER NOISE;

MOSFET DEVICES;

EID: 0034860732     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Noise characterization of MOSFET's for RF oscillator design
2. 1/f noise in MOS devices mobility or number fluctuations?
3. Measurement and modeling of MOSFET's 1/f noise with BSIM3 version 3.2 for an analog circuit design
4. Fluctuations of the low frequency noise of transistors and their modeling in analog and RF-circuits