High-temperature operation of mid-infrared (λ=4-5 μm) vertical and lateral InAs/GaAs/AlGaAs quantum dot infrared photodetectors

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 155-156

  Stiff, A D ^a   Krishna, S ^a   Bhattacharya, P ^a   Kennerly, S ^a  

^a Department of Ecology and Evolutionary Biology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; ELECTRIC CURRENTS; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; INFRARED RADIATION; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

PHOTODETECTORS;

EID: 0034860186     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)