Excimer-laser-produced two-dimensional arrays of large Si-grains

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4295, Issue , 2001, Pages 1-13

  Matsumura, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Crystal growth; Excimer laser annealing; Phase shifting; Poly Si; System on panel; Thin film transistor

Indexed keywords

ANNEALING; ARRAYS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EXCIMER LASERS; GRAIN GROWTH; LASER PULSES; PHASE SHIFT; TEMPERATURE DISTRIBUTION; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

EXCIMER LASER ANNEALING;

POLYSILICON;

EID: 0034858943     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.424883     Document Type: Conference Paper

References (17)

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7. A new nucleation-site-control excimer-laser-crystallization method
8. Two-dimensionally position controlled ultra-large grain growth based on phase-modulated excimer-laser annealing method
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10. Preparation of giant-grain seed layer for poly-silicon thin-film solar cells
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15. Single-shot excimer-laser crystallization of an ultra large Si thin-film disk
16. Optimization of phase-modulated excimer-laser annealing method for growing highly-packed large-grains in Si thin-films
17. A projection-type excimer-laser crystallization system for ultra-large grain growth of Si thin-films