Novel waveguide MSM photodetectors on SOI substrates using silicides

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4293, Issue , 2001, Pages 106-113

  Xu, D X ^a   Janz, S ^a   Cheben, P ^a   Delage A ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

High speed; Near infrared; Photodetector; Silicides; Silicon on insulator; SOI; Waveguide photodetector

Indexed keywords

HEAT TREATMENT; OPTICAL WAVEGUIDES; PHOTOCURRENTS; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

METAL-SEMICONDUCTOR-METAL (MSM)DETECTORS;

PHOTODETECTORS;

EID: 0034858758     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.426927     Document Type: Conference Paper

References (11)

1. 140 GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layer
2. High-speed metal-semiconductor-metal photodetectors fabricated on SOI-substrates
3. Comparison of the picosecond characteristics of silicon and silicon-on-sapphire metal-semiconductor-metal photodiodes
4. SOI waveguide GeSi avalanche pin photodetector at 1.3 μm wavelength
5. Selective epitaxial growth Si resonant-cavity photodetector
6. 2 resonant cavity photodetector
7. A vertical cavity longwave infrared SiGe/Si photodetector using a buried silicide mirror
8. Fabrication of ultrafast Si based MSM photodetector
9. Thickness dependence of the properties and thermal stability of PtSi films
10. Electrical and structural properties of PtSi films in deep submicron lines