High-speed metal-semiconductor-metal photodetectors fabricated on SOI-substrates

Physica Scripta T

Volumn 79, Issue , 1999, Pages 127-130

  Honkanen, K ^a   Hakkarainen, N ^a   Maatta K ^b   Kilpela A ^b   Kuivalainen, P ^a  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF OULU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRODES; HETEROJUNCTIONS; METALLIZING; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE CHARACTERISTICS; LIFT-OFF TECHNIQUE; METAL-SEMICONDUCTOR-METAL (MSM) DEVICES;

PHOTODETECTORS;

EID: 0033359835     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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