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Applied Surface Science

Volumn 172, Issue 3-4, 2001, Pages 200-206

On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

(3) Lindstam, Mikael a Boman, Mats a Piglmayer, Klaus b

a UPPSALA UNIVERSITY (Sweden)

b JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CONTINUOUS WAVE LASERS; DISSOCIATION; FILM GROWTH; HYDROGENATION; QUARTZ; SUBSTRATES; TUNGSTEN; ULTRAVIOLET RADIATION;

PHOTOLYTIC DISSOCIATION;

AMORPHOUS FILMS;

EID: 0034831955 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00853-9 Document Type: Article

Times cited : (4)

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