A new dynamic, self-consistent electro-thermal model of power HBTs and a novel interpretation of thermal collapse loci in multi-finger devices

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2001, Pages 397-400

  Cappelluti, F ^a   Bonani, F ^a   Guerrieri, S D ^a   Ghione, G ^a   Peroni, M ^b   Cetronio, A ^b   Graffitti, R ^b  

^a POLITECNICO DI TORINO   (Italy)

^b ALENIA SPAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BIFURCATION (MATHEMATICS); COUPLED CIRCUITS; FREQUENCY DOMAIN ANALYSIS; HARMONIC ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

ELECTROTHERMAL MODEL; ELECTROTHERMAL POWER DEVICE ANALYSIS; FREQUENCY DOMAIN THERMAL MODEL; MULTIFINGER DEVICES; THERMAL COLLAPSE LOCI; THERMAL IMPEDANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034829044     PISSN: 08865930     EISSN: None     Source Type: Journal    
DOI: 10.1109/CICC.2001.929809     Document Type: Article

References (12)