Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

Applied Physics A: Materials Science and Processing

Volumn 73, Issue 3, 2001, Pages 323-325

  Meng, X J ^a   Sun, J L ^a   Yu, J ^a   Wang, G S ^a   Guo, S L ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; ELECTRODES; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PEROVSKITE; THIN FILMS;

FERROELECTRIC FATIGUE;

METALLIC FILMS;

EID: 0034823993     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000696     Document Type: Article

References (17)