Anti-phase domain boundaries in ZnGeP2 (ZGP)

Optical Materials

Volumn 16, Issue 1-2, 2001, Pages 119-123

  Shimony, Y ^a,b   Fledman, R ^a   Dahan, I ^b   Kimmel, G ^b  

^a ROTEM INDUSTRIES LTD   (Israel)

^b NUCLEAR RESEARCH CENTER NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GRAIN BOUNDARIES; TRANSMISSION ELECTRON MICROSCOPY;

ZINC GERMANIUM PHOSPHIDE;

ZINC COMPOUNDS;

EID: 0034817613     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(00)00067-7     Document Type: Article

References (22)

1. A.A. Viapolin, E.O. Osmanov, V.D. Prochukhan, Izv. Acad. Nauk SSSR, Neorg. Mater. 8 (5) (1972) 947.
2. L. Shay, J.H. Wernick, in: Ternary Chalcopyrite Semiconductors Growth Electronic Properties and Applications, Pergamon Press, New York, 1975.
3. J.J.M. Binsma, L.J. Giling, J. Bloem, Phys. Stat. Sol. (a) 63 (1981) 595.
4. A.A. Vaipolin, N.A. Goryunova, L.I. Kleshchinskii, G.V. Loshakova, E.O. Osmanov, Phys. Stat. Sol. 29 (1968) 435.
5. M.H. Rakowsky, W.K. Kuhn, W.J. Lauderdale, L.E. Halliburton, G.J. Edwards, M.P. Scripsick, P.G. Schunemann, T.M. Pollak, M.C. Ohmer, F.K. Hopkins, Appl. Phys. Lett. 64 (13) (1994) 1615.
6. Y. Shimony, G. Kimmel, O. Raz, M.P. Dariel, J. Cryst. Growth 198-199 (1999) 583.
7. K. Masumoto, S. Isomura, W. Goto, J. Phys. Chem. Solids 27 (1966) 1939.
8. S. Fiechter, R.H. Castleberry, M. Angelov, K.J. Bachmann, in: M.O. Manasreh, T.M. Myers, F.H. Julien (Eds.), Infrared Applications of Semiconductors - Materials, Processing and Devices, MRS Symposium Proceedings, vol. 450, MRS 1996 Fall Meeting, Boston, 2-6 December 1996, p. 315.
9. F.K. Hopkins, Laser Focus World, July 1995, p. 87.
10. D.F. Bliss, M. Harris, J. Horrigan, W.M. Higgins, A. Armington, J.A. Adamski, J. Cryst. Growth 137 (1994) 1945.
11. H.M. Hobgood, T. Henningsen, R.N. Thomas, R.H. Hopkins, M.C. Ohmer, W.C. Mitchel, D.W. Fischer, S.M. Hedge, F.K. Hopkins, J. Appl. Phys. 73 (8) (1993) 4030.
12. L.S. Gorbon, V.V. Grishchuk, I.J. Tregub, Sov. Phys. Semicond. 18 (1984) 567.
13. G.K. Averkieva, V.S. Grigoreva, I.A. Maltseva, V.D. Prochukhan, Yu.V. Rud, Phys. Status. Solidi A 39 (1977) 453.
14. M.H. Rakowsky, W.K. Kuhn, W.J. Lauderdale, L.E. Halliburton, G.J. Edwards, M.P. Scripsick, P.G. Schunemann, T.M. Pollak, M.C. Ohmer, F.K. Hopkins, Appl. Phys. Lett. 64 (13) (1994) 1615.
15. L.E. Hallliburton, G.J. Edwards, M.P. Scripsick, M.H. Rakowsky, P.G. Schunemann, T.M. Pollak, Appl. Phys. Lett. 66 (1995) 2670.
16. A. Sodeika, A.Z. Silevicius, Z. Januskevicius, A. Sakalas, Phys. Status Solidi A 69 (1982) 491.
17. Y.V. Rud, R.V. Mesagutova, Sov. Tech. Phys. Lett. 7 (2) (1981) 72.
18. M.H. Rakowsky, W.J. Lauderdale, R.A. Mantz, R. Pandey, P.J. Drevinsky, D.C. Jacobson, D.E. Luzzi, T.F. Heinz, M. Iwaki (Eds.), Beam-Solid Interactions for Materials Synthesis and Characterization Symposium, Pittsburgh, PA, USA, 1995, p. 735.
19. Y. Shimony, O. Raz, G. Kimmel, M.P. Dariel, Opt. Mater. 13 (1) (1999) 101.
20. M.D. Lind, R.W. Grant, J. Chem. Phys. 58 (1) (1973) 357 JCPDS No. 33-1471.
21. J.W. Edington, Practical Electron Microscopy in Material Science, Van Nostrand Reinhold Company, New York, 1976.
22. B.W. Williams, C.B. Carter, Transmission Electron Microscopy, Plenum Press, New York, 1996.