Temperature Dependent Loss and Overflow Effects in Quantum Well Lasers

IEEE Photonics Technology Letters

Volumn 6, Issue 11, 1994, Pages 1293-1296

  Mikhaelashvili, V ^a   Tessler, N ^a   Nagar, R ^a   Eisenstein, G ^a   Dentai, A G ^b   Chandrasakhar, S ^b   Joyner, C H ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC CURRENTS; HEAT LOSSES; LASER RESONATORS; MEASUREMENTS; PHOTONS; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CARRIER INJECTION MODEL; INTERVALANCE BAND; LASER CAVITY; MODIFIED FACET REFLECTIVITIES; OVERFLOW EFFECTS; PHOTON DENSITY DEPENDENCE; TEMPERATURE DEPENDENT LOSS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0028548819     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.334817     Document Type: Article

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