Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue 1, 2001, Pages 310-315

  Roycroft, Brendan ^a   Sipil̈, Pekko ^b   Melanen, Petri ^b   Savolainen, Pekka ^b   Pessa, Markus ^b   Leońs, Manuel ^a   Ṕrez, Sara ^a   Carpintero, Guillermo ^a   Lamela, Horacio ^a  

^a UNIVERSIDAD CARLOS III DE MADRID   (Spain)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS;

PHASE LOCKING;

SEMICONDUCTOR LASERS;

EID: 0034774414     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.432579     Document Type: Article

References (12)

1. New mechanism for bistable operation of closely coupled twin stripe lasers
2. Lateral-mode analysis of gain-guided and index-guided semiconductor laser arrays
3. GaInAsP twin-stripe lasers with asymmetrical waveguide channels
4. Modulation of twin-emitter semiconductor lasers beyond the frequency of relaxation oscillations
5. Modulation of phased-array semiconductor lasers at K-band frequencies
6. Eigenmodes of the dynamically coupled twin-stripe semiconductor laser
7. Two cross-coupled-mode operation of a twin-stripe laser: Bistability for wide ranges of output power level and current ratio
8. Integrated interferometric injection laser: Novel fast and broad-band tunable monolithic light source
9. Instabilities and dynamic behaviour in a two lateral coupled semiconductor laser array
10. Coupling effects in the dynamic behaviour of two laterally coupled semiconductor lasers
11. Well-thickness dependence of high-temperature characteristics in 1.3 μm AlGaInAs-InP strained-multiple-quantum-well lasers
12. AlGaInAs/InP strained-layer quantum well lasers at 1.3 μm grown by solid source molecular beam epitaxy