Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 1073-1078

  Aoyagi, Masahiro ^a   Segawa, Shigemasa ^b   Jung, Eun Sil ^b   Itatani, Taro ^a   Komuro, Masanori ^a   Sakamoto, Tsunenori ^a   Itatani, Hiroshi ^b   Miyamura, Masataka ^b   Matsumoto, Shunichi ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b PI Research and Development Co Ltd   (Japan)

Author keywords

Block copolymerization; Dielectric; Photosensitive; Polyimide

Indexed keywords

BLOCK COPOLYMERS; COPOLYMERIZATION; ELECTRIC BREAKDOWN; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; LIGHT SENSITIVE MATERIALS; LITHOGRAPHY; LSI CIRCUITS; ORGANIC SOLVENTS; PERMITTIVITY; PERTURBATION TECHNIQUES; PHOTOSENSITIZERS; SILICON WAFERS; SPIN COATING; THIN FILMS;

BLOCK COPOLYMERIZATION;

POLYIMIDES;

EID: 0034764026     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436832     Document Type: Article

References (6)

1. Applications of newly developed positive type photosensitive block co-polyimides to CSPs
2. Thicker film photodefinable polyimides
3. Positive photosensitive polyimide synthesized by block-copolymerization for KrF lithography
4. Accurate Q-factor evaluation by resonance curve method and its application to the cavity perturbation