Advanced KrF chemical amplified photoresists for 0.13um lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 610-617

  Lin, Qunying ^a   Michael, Sack ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Advanced KrF photoresists; Annular illumination; Half tone PSM; OPC technology; Process window

Indexed keywords

IMAGE ANALYSIS; MASKS; PHASE SHIFT; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

CHEMICAL AMPLIFIED PHOTORESISTS (CAR);

PHOTORESISTS;

EID: 0034758538     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436894     Document Type: Article

References (3)

1. Challenge to 0.13um device patterning using KrF
2. Sub-120nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography
3. The emergence of assist feature OPC era in sub-130nm DRAM devices