Femtosecond Yb:YCOB laser pumped by narrow-stripe laser diode and passively modelocked using ion implanted saturable-absorber mirror

Electronics Letters

Volumn 36, Issue 19, 2000, Pages 1621-1623

  Valentine, G J ^c   Kemp, A J ^a   Birkin, D J L ^a   Burns, D ^b   Balembois, F ^c   Georges, P ^c   Bernas, H ^c   Aron, A ^c   Aka, G ^c   Sibbett, W ^a   Brun, A ^c   Dawson, M D ^b   Bente, E ^b  

^a UNIVERSITY OF ST ANDREWS   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; LASER MODE LOCKING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; PUMPING (LASER); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

FEMTOSECOND LASERS; PASSIVE MODELOCKING;

SEMICONDUCTOR LASERS;

EID: 0034648553     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001141     Document Type: Article

References (6)

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6. LEDERER, M.J., LUTHER-DAVIES, B., TAN, H.H., and JAGADISH, C.: 'An antiresonant Fabry-Perot saturable absorber for passive modelocking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking', IEEE J. Quantum Electron., 1998, 34, (11), pp. 2150-2161