Drift velocity monitoring of SDDs using MOS charge injectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 450, Issue 2, 2000, Pages 338-342

  Nouais, D ^a   Boetti, N ^a   Bonvicini, V ^b   Cerello, P ^a   Giubellino, P ^a   Hernandez Montoya R ^a,e   Kolojvari, A ^a,f   Mazza, G ^a   Nissinen, J ^c   Rashevsky, A ^b   Rivetti, A ^a,d,g   Tosello, F ^a   Vacchi, A ^b  

^a SEZIONE DI TORINO   (Italy)

^b SEZIONE DI TRIESTE   (Italy)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^d POLITECNICO DI TORINO   (Italy)

^e DEPARTAMENTO DE FÍSICA   (Mexico)

^f ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^g CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; EQUIPMENT TESTING; MOS DEVICES; PARTICLE BEAMS; SILICON SENSORS; THERMAL EFFECTS; VOLTAGE DIVIDERS;

BEAM TEST CONDITION; CHARGE INJECTOR; DRIFT VELOCITY MONITORING; MOS CHARGE INJECTORS; POSITION SENSITIVE DETECTOR; SILICON DRIFT DETECTOR;

DRIFT CHAMBERS;

EID: 0034636916     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00278-3     Document Type: Article

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