Silicon drift detector; studies about geometry of electrodes and production technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 393-396

  Beole S ^d   Bonvicini, V ^f   Burger, P ^e   Casse, G ^d   Corsi, F ^b   De Venuto, D ^b   Giubellino, P ^d   Gramegna, G ^b   Kolojvari, A ^a,d   Manzari, V ^c   Marzocca, C ^b   Rashevsky, A ^f   Riccati, L ^d   Vinogradov, L ^a   Vacchi, A ^f   Zampa, N ^f  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b INFN SEZIONE DI BARI   (Italy)

^c UNIVERSITY OF BARI   (Italy)

^d SEZIONE DI TORINO   (Italy)

^e Canberra NV Belgium   (Belgium)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; DEPOSITION; ELECTRIC FIELDS; ELECTRODES; OXIDES; PRODUCTION; SILICON SENSORS; SILICON WAFERS; TECHNOLOGY; VLSI CIRCUITS;

DETECTOR PRODUCTION; ENERGY RESPONSE; HIGH SPATIAL RESOLUTION; PRODUCTION TECHNOLOGY; SILICON DRIFT DETECTORS;

RADIATION DETECTORS;

EID: 0030214004     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00201-X     Document Type: Article

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