25GHz MMIC oscillator fabricated using commercial SiGe-HBT process

Electronics Letters

Volumn 36, Issue 3, 2000, Pages 218-220

  Kuhnert, H ^a   Heinrich, W ^a   Schwerzel, W ^b   Schuppen A ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b Vishay   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY OF SOLIDS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MICROWAVE OSCILLATORS; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

PHASE NOISE; SILICON GERMANIUM;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0034598697     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000206     Document Type: Article

References (8)

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6. RHEINFELDER, C.N., BEIßWANGER, F.J., and HEINRICH, W.: 'Nonlinear modeling of SiGe HBTs up to 50GHz', IEEE Trans. Microw. Theory Tech., 1997, 45, (12), pp. 2503-2508
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