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Volumn , Issue , 1998, Pages 332-335

Fully-monolithic 3V SiGe differential voltage-controlled oscillators for 5GHz and 17GHz wireless applications

Author keywords

[No Author keywords available]

Indexed keywords

CENTER FREQUENCY; CONTROL VOLTAGES; FIGURE OF MERITS; FULLY INTEGRATED; SUPPLY VOLTAGE VARIATION; TUNING RANGES; VOLTAGE-CONTROLLED-OSCILLATOR; WIRELESS APPLICATION;

EID: 0002109760     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIR.1998.186276     Document Type: Conference Paper
Times cited : (29)

References (12)
  • 1
    • 5244224951 scopus 로고    scopus 로고
    • A compact gaas mmic transmitter/receiver chip set for 17 to 18ghz lans
    • Apr
    • S. Nam, et. al., "A Compact GaAs MMIC Transmitter/Receiver Chip Set for 17 to 18GHz LANs," Microwave Journal, Apr. 97, pp. 78-90.
    • Microwave Journal , vol.97 , pp. 78-90
    • Nam, S.1
  • 3
    • 0031073123 scopus 로고    scopus 로고
    • Silicon bipolar vco family for 1.1 to 2.2ghz with fully-integrated tank and tuning circuits
    • Feb
    • B. Jansen, et. al., "Silicon Bipolar VCO Family for 1.1 to 2.2GHz with Fully-Integrated Tank and Tuning Circuits," ISSCC Digest of Technical Papers, Feb. 97, pp. 392-393.
    • ISSCC Digest of Technical Papers , vol.97 , pp. 392-393
    • Jansen, B.1
  • 4
    • 0031652007 scopus 로고    scopus 로고
    • A fully integrated 2.7v 0.35um cmos vco for 5ghz wireless applications
    • Feb
    • P. Kinget, "A Fully Integrated 2.7V 0.35um CMOS VCO for 5GHz Wireless Applications," ISSCC Digest of Technical Papers, Feb. 98, pp. 226-227.
    • ISSCC Digest of Technical Papers , vol.98 , pp. 226-227
    • Kinget, P.1
  • 5
    • 84893807736 scopus 로고    scopus 로고
    • A 3v 4ghz nmos voltage-controlled oscillator with integrated resonator
    • Feb
    • M. Soyuer, et al., "A 3V 4GHz nMOS Voltage-Controlled Oscillator with integrated Resonator," ISSCC Digest of Technical Papers, Feb. 97, pp. 394395.
    • ISSCC Digest of Technical Papers , vol.97 , pp. 394395
    • Soyuer, M.1
  • 6
    • 0031655214 scopus 로고    scopus 로고
    • A 3.5mw 2.5ghz diversity receiver and a 1.2mw 3.6ghz vco in silicon-on-anything
    • Feb
    • A. Wagemans, et. al., "A 3.5mW 2.5GHz Diversity Receiver and a 1.2mW 3.6GHz VCO in Silicon-On-Anything," ISSCC Digest of Technical Papers, Feb. 98, pp. 250-251.
    • ISSCC Digest of Technical Papers , vol.98 , pp. 250-251
    • Wagemans, A.1
  • 7
    • 0031236111 scopus 로고    scopus 로고
    • An 11ghz 3-v sige voltage-controlled oscillator with integrated resonator
    • Sept 97
    • M. Soyuer, et. al., "An 11GHz 3-V SiGe Voltage-Controlled Oscillator with Integrated Resonator," IEEE J. Solid-State Circuits, Vol. 32, N9, Sept. 97, pp. 14511454.
    • IEEE J. Solid-State Circuits , vol.32 , Issue.9 , pp. 14511454
    • Soyuer, M.1
  • 9
    • 0028762691 scopus 로고    scopus 로고
    • A very compact wide band hbt mmic vco with a two-output buffer amplifier
    • March 94
    • J.O. Plouchart, et al., "A Very Compact Wide Band HBT MMIC VCO with a Two-Output Buffer Amplifier," Electronic Letter, March 94, Vol. 30, N5, pp. 420-422.
    • Electronic Letter , vol.30 , Issue.5 , pp. 420-422
    • Plouchart, J.O.1
  • 10
    • 0031353281 scopus 로고    scopus 로고
    • A sige hbt bicmos technology for mixed signal rf applications
    • D. Ahlgren, et. al., "A SiGe HBT BiCMOS Technology for Mixed Signal RF Applications," IEEE BCTM Tech. Dig. 1997, pp. 195-198.
    • (1997) IEEE BCTM Tech. Dig. , pp. 195-198
    • Ahlgren, D.1
  • 11
    • 0031679534 scopus 로고    scopus 로고
    • Rf circuit design aspects of spiral inductors on silicon
    • Feb
    • J. Burghartz, et. al., "RF Circuit Design Aspects of Spiral Inductors on Silicon," ISSCC Digest of Technical Papers, Feb. 98, pp. 246-247.
    • ISSCC Digest of Technical Papers , vol.98 , pp. 246-247
    • Burghartz, J.1
  • 12
    • 0029771682 scopus 로고    scopus 로고
    • Low-frequency noise characteristics of uhv/cvd epitaxial si-and sige-base bipolar transistors
    • Jan. 96
    • J.D. Cresler, et. al., "Low-Frequency Noise Characteristics of UHV/CVD epitaxial Si-and SiGe-base Bipolar Transistors," IEEE Electron Device Letters, Vol. 17, Jan. 96, pp. 13-15.
    • IEEE Electron Device Letters , vol.17 , pp. 13-15
    • Cresler, J.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.