Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications

Journal of the Electrochemical Society

Volumn 142, Issue 11, 1995, Pages 3864-3869

  Haque, M S ^a   Naseem, H A ^a   Brown, W D ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ETCHING; IMPURITIES; LOW TEMPERATURE OPERATIONS; MULTICHIP MODULES; REFRACTIVE INDEX; SILICA; THICK FILMS;

ETCH RATE; FILM STRESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; UNIFORMITY;

CHEMICAL VAPOR DEPOSITION;

EID: 0029409989     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048425     Document Type: Article

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