Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10287-10293

  Lavagne, S ^a   Levade, C ^a   Vanderschaeve, G ^a   Crestou, J ^a   Tournie E ^b   Faurie, J P ^b  

^a CEMES CNRS   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STACKING FAULTS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BURGERS VECTORS;

SEMICONDUCTING FILMS;

EID: 0034513499     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/330     Document Type: Article

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