New type of superlattice: An epitaxial semiconductor-atomic superlattice, SAS

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 351-361

  Tsu, Raphael ^a  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTOR-ATOMIC-SUPERLATTICE (SAS);

SEMICONDUCTOR SUPERLATTICES;

EID: 0034512991     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (36)

1. L. T., Canham,Appl. Phys. Lett. 57 1046-1048 (1990).
2. V. Lehmann, and U. Gösele, Appl. Phys. Lett. 58 856-858 (1991).
3. D. Babic, and R. Tsu, Superlattices and Microstructures 22,582-588(1997)
4. R. Tsu, H. Shen, and M. Dutta, Appl. Phys. Lett. 60 112-114 (1992).
5. S. M. Prokes, J. A., Freitas, and P. C. Searson, Appl. Phys. Lett. 60 3295-3297 (1992).
6. See for example: Y. Kanemitsu, Phys. Rev. B 49 16845-16848 (1994).
7. L. Esaki, and R. Tsu, R., IBMJ. of Res. andDev. 14 61-65 (1970).
8. J. W. Matthews, and A. E. Blakeslee, A. E., J. Cryst. Growth 32 265-273 (1976).
9. G. C, Osburn, J. Appl. Phys. Lett. 57 1586-1589 (1982).
10. R. Tsu, Nature 364 19 (1993).
11. R. Tsu, J. Morais, and A. Bowhill, in Porous Silicon, Eds. Z. C. Feng and R. Tsu (World Scientific 1994), P. 443-448.
12. R. Tsu, J. G. Hernandez, S. S. Chao, and D. Martin, Appl. Phys. Lett. 48 , 647-649 (1986).
13. R. Tsu, J. Morais, and A. Bowhill, Mat. Res. Soc. Symp.Proc. 358, 825-832 (1995).
14. J. H. Stathis, and M. A. Kastner, Phys. Rev. B 35 2972 (1987).
15. See for example: P. M. Fauchet, in Porous Silicon, Eds. Z. C. Feng and R. Tsu (World Scientific 1994), P. 449-465.
16. A. Anedda, et. al., J. Appl. Phys. 74 6993 (1993).
17. R. A. Street, and D. K. Biegelsen, Solid Satate Comm 33 1159-1162 (1980).
18. R. Tsu, A. Filios, C. Lofgren, K.Dovidenko and C. G. Wang, Electrochem and Solid Stale Lett., 1 (2) 80 (1998). "
19. D.Meakin, M.Stobbs, J.Stoemenos and N.A.Economou, Appl. Phys. Lett. 52,1053 (1988)
20. R. Tsu, K. Dovidenko, and C. Lofgren, ECSProc. 99-22, 294-301 (1999)
21. R. Tsu, ECSProc. 98-19,3 (1999)
22. J.Ding and R. Tsu, Appl. Phys. Lett. 71, 2124 (1997).
23. RTsu, Q.Zhang, and A. Filios, S7V£ 3290,246 (1997).
24. Z.H.Lu,D.J .Lockwood and J.M.Barlbeau, Atawe,378, 825(1995)
25. L.Tsybeskov,K.D.Hirschman,S.P.Duttagupta,P.M.Fauchet,M.Zacharias,P. Kohlert, J.P.McCaffrey and D.J. Lockwood, ECSProc. 97-11,134 (1997)
26. In 'Atomic Spectra and Atomic Structure', G. Herzberg, (Dover Publications, New York, 1944)
27. L.J. Radziemski, and K.L. Andrew, J. Opt Soc.Am, 55,474(1965)
28. V. Kaufman, L.J. Radziemski, and K.L. Andrew,.J. OptSoc. Am, 56,911(1966).
29. R. P.Gupta, Plys.Rev.B32, 8278(1985)
30. Y.P Li, and W.Y. Ching, Phys. Aev.BSl,2172 (1985).
31. A.M. Mazzone, Europhysics Lett. 35,13-18 (1996)
32. R. Tsu, A. Filios, C.Lofgren, D. Cahill, J. Van Nostrand, and C.G.Wang, Solid-State Electronics, 40,221-223 (1996)
33. G.I.Distler, B.B. Zvyagin, Nature, 212, 807 (1966).
34. R. Tsu, A.Filios, and Q. Zhang, 'Perspectives of Light Emitters in Nanoscale Silicon' Advances in Science and Technology, 27, Innovative Light Emitting Materials, editors, P. Vincenzini and G.C.Righini, (Techna Sri. 1999) p.55
35. 35>MS Thesis by J. Dinkier, Deaprtment of ECE, UNC-Charlotte, Dec. 1998.
36. R. Tsu, A. Filios, C.Lofgren, J.Ding, Q.Zhang, J.Morais, and C.G.Wang, ECSProc. 97-11, 341-350(1997)