Silicon epitaxy on Si(100) with adsorbed oxygen

Electrochemical and Solid-State Letters

Volumn 1, Issue 2, 1998, Pages 80-82

  Tsu, R ^a,d   Filios, A ^a,d   Lofgren, C ^a,b   Dovidenko, K ^c   Wang, C G ^b  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^b NanoDynamics Inc   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

^d ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GAS ADSORPTION; OXYGEN; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

HETEROEPILATTICE SUPERLATTICE;

SEMICONDUCTING SILICON;

EID: 0032139118     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390643     Document Type: Article

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