Current instability and shot noise in nanometric semiconductor heterostructures

Nanotechnology

Volumn 11, Issue 4, 2000, Pages 370-374

  Aleshkin, V Ya ^a   Reggiani, L ^b   Reklaitis, A ^c  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INFM   (Italy)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SHOT NOISE;

CURRENT INSTABILITY; HETEROSTRUCTURE HOT-ELECTRON DIODE (HHED);

HETEROJUNCTIONS;

EID: 0034505013     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/11/4/335     Document Type: Article

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