Prediction of enhanced shot-noise in tunneling-controlled transport

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 279-281

  Reklaitis, A ^a   Reggiani, L ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b UNIVERSITY OF SALENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MONTE CARLO METHODS; PROBABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

ALUMINUM GALLIUM ARSENIDE; FANO FACTOR; SHOT NOISE; SINGLE ELECTRON TUNNELING PROBABILITY;

HETEROJUNCTIONS;

EID: 0033330811     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00286-0     Document Type: Article

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