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Volumn 417, Issue , 1996, Pages 91-96
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Comparative study on three types of ordered structures (TP-A, CuPt-A, CuPt-B) in AlInAs, GaInAs, AlInP, and GaInP - bonding energy difference effects
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM ALLOYS;
BINDING ENERGY;
GALLIUM ALLOYS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
BONDING ENERGY;
BONDING ENERGY DIFFERENCE EFFECTS;
FORMATION MECHANISM;
GAS SOURCE MOLECULAR BEAM EPITAXY;
ORDERED STRUCTURES;
SUBLATTICE;
CRYSTAL ATOMIC STRUCTURE;
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EID: 0029709542
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (18)
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