Retention and imprint properties in single-crystalline PLZT thin film capacitors

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2000, Pages 173-176

  Kurasawa, M ^a   Kurihara, K ^a   Otani, S ^a   Kutami, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; FERROELECTRIC THIN FILMS; INTERFACES (MATERIALS); LEAD COMPOUNDS; LEAKAGE CURRENTS; MAGNETIC HYSTERESIS; MAGNETIC VARIABLES MEASUREMENT; RANDOM ACCESS STORAGE; THIN FILM DEVICES; X RAY DIFFRACTION ANALYSIS;

ASYMMETRIC VOLTAGE SHIFT; CHARGE ACCUMULATION; CURRENT VOLTAGE MEASUREMENT; IMPRINT PROPERTIES; LEAD LANTHANUM ZIRCONIUM TANTALUM OXIDES; RETENTION PROPERTIES;

CAPACITORS;

EID: 0034471877     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 3 thin-film capacitors with La-Sr-Co-O electrodes
2. Voltage shifts and imprint in ferroelectric capacitors
3. 3 thin films
4. Driving force behind voltage shifts in ferroelectric materials
5. Imprint in ferroelectric capacitors
6. 3 ferroelectric capacitors
7. 3 thin films
8. 3 thin films
9. 3 thin film capacitors: Part 1