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Volumn 511, Issue , 1998, Pages 57-62
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Newly developed low-K and low-stress fluorinated silicon oxide utilizing temperature-difference liquid-phase deposition technology
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DEHYDRATION;
DEPOSITION;
DIELECTRIC MATERIALS;
DISSOLUTION;
FLUORIDATION;
LIQUID PHASE EPITAXY;
MOISTURE;
STRESSES;
TEMPERATURE;
BOILING CYCLES;
INTERMETAL DIELECTRIC;
LIQUID PHASE DEPOSITION;
LOW STRESS FLUORINATED SILICON OXIDE;
MOISTURE ABSORPTION;
SILICIC ACID;
SILICA;
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EID: 0032302909
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-511-57 Document Type: Conference Paper |
Times cited : (2)
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References (8)
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