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Volumn 511, Issue , 1998, Pages 57-62

Newly developed low-K and low-stress fluorinated silicon oxide utilizing temperature-difference liquid-phase deposition technology

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEHYDRATION; DEPOSITION; DIELECTRIC MATERIALS; DISSOLUTION; FLUORIDATION; LIQUID PHASE EPITAXY; MOISTURE; STRESSES; TEMPERATURE;

EID: 0032302909     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-511-57     Document Type: Conference Paper
Times cited : (2)

References (8)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.