Evaluation of CSD-PZT thick films with different film density

IEEE International Symposium on Applications of Ferroelectrics

Volumn 2, Issue , 2000, Pages 957-960

  Maki, K ^a   Soyama, N ^a   Mori, S ^a   Ogi, K ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FERROELECTRICITY; LEAKAGE CURRENTS; PLATINUM; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; SILICA; SILICON; SUBSTRATES; TITANIUM;

CHEMICAL SOLUTION DEPOSITION; ELECTRICALLY INDUCED STRAIN; FILM DENSITY; LEAKAGE CURRENT DENSITY; LONGITUDINAL STRAIN; PROPYLENE-GLYCOL-BASED SOL-GEL; REMANENT POLARIZATION;

THICK FILMS;

EID: 0034470442     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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8. 3 thin film processing
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13. 3 films derived from propylene-glycol-based sol-gel solutions
14. 3 thin films