Characterization of dual damascene Cu-SiO2 interconnects in time and frequency domains

Advanced Metallization Conference (AMC)

Volumn , Issue , 2000, Pages 19-24

  Bermond, C ^a   Flechet, B ^a   Arnal, V ^a   Farcy, A ^a   Torres, J ^a   Morand, Y ^a   Le Carval, G ^a   Salik, R ^a   Bauzac, S ^a   Angenieux, G ^a  

^a UNIVERSITÉ DE SAVOIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CROSSTALK; DIGITAL SIGNAL PROCESSING; ELECTRIC POTENTIAL; ELECTROMAGNETISM; FREQUENCY DOMAIN ANALYSIS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; PERMITTIVITY; TIME DOMAIN ANALYSIS;

DUAL DAMASCENE;

COPPER;

EID: 0034459212     PISSN: 10480854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Electrical characteristics of interconnections for high-performances systems
2. On chip interconnects - GigaHertz and beyond
3. Characterization of propagation and crosstalk effects on long lossy interconnects of high speed VLSI circuits
4. Performance characterization of advanced interconnects on high speed VLSI circuits
5. Extraction of(R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools
6. Characteristic impedance determination using propagation constant measurement