Investigation of hardmask/BARC materials for 157nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4226, Issue , 2000, Pages 93-106

  Kim, W D ^a   Miller, D A ^a   Kim, H S ^a   Byers, J D ^a   Daniels, M ^a   Birmingham, B ^a   Tompkins, J ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; ATOMS; COMPUTER SIMULATION; ELLIPSOMETRY; MASKS; MOLECULAR STRUCTURE; PHYSICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMERS; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS;

BOTTOM ANTI REFLECTIVE COATING; EXTINCTION COEFFICIENT; HARDMASK; HYDROGEN FORWARD SCATTERING; OPTICAL CONSTANTS; VACUUM ULTRAVIOLET VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

LITHOGRAPHY;

EID: 0034452893     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.404844     Document Type: Article

References (8)