Radiation damage studies of silicon microstrip sensors

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6, 2000, Pages 1885-1891

  Nakayama, T ^a   Arai, S ^a   Hara, K ^a   Shimojima, M ^a   Ikegami, Y ^b   Iwata, Y ^c   Johansen, L G ^d   Kobayashi, H ^a   Kohriki, T ^b   Kondo, T ^b   Nakano, I ^e   Ohsugi, T ^c   Riedler, P ^f   Roe, S ^f   Stapnes, S ^g   Stugu, B ^d   Takashima, R ^h   Tanizaki, K ^a   Terada, S ^b   Unno, Y ^a   Yamamoto, K ⁱ   Yamamura, K ⁱ   more..

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d UNIVERSITY OF BERGEN   (Norway)

^e OKAYAMA UNIVERSITY   (Japan)

^f CERN   (Switzerland)

^g UNIVERSITY OF OSLO   (Norway)

^h KYOTO UNIVERSITY OF EDUCATION   (Japan)

ⁱ CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; COLLIDING BEAM ACCELERATORS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HIGH ENERGY PHYSICS; LEAKAGE CURRENTS; PROTON IRRADIATION;

BULK RESISTIVITY; CAPACITANCE-VOLTAGE CHARACTERISTICS; LARGE HADRON COLLIDER; SILICON MICROSTRIP SENSOR;

RADIATION DAMAGE;

EID: 0034452001     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.914464     Document Type: Article

References (12)

1. Radiation test of ATLAS full-sized n-in-n prototype detectors
2. Evaluation of radiation damaged P-in-n and N-in-n silicon microstrip detectors
3. Reverse annealing of the effective impurity concentration and long term operation scenario for silicon detectors in future collider experiments
4. Temperature dependence of the radiation induced charge of depletion voltage in silicon PIN detectors
5. Radiation induced bulk damage in silicon detectors
6. Type inversion in silicon detectors
7. Novel P-stop structure in the N-side silicon microstrip detector
8. Evaluation of P-stop structures in the N-side of N-on-N silicon strip detector
9. Proton irradiation on p-bulk silion detectors using 12 GeV PS at KEK
10. New electronics system for silicon strip readout for 18 keV electrons