Direct proof of argon atoms incorporation into high-purity silicon single crystals during growth in argon gas ambient

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4218, Issue , 2000, Pages 66-76

  Ulyashin, A G ^a   Job, R ^a   Fahrner, W R ^a   Mudryi, A V ^a   Patuk, A I ^a   Shakin, I A ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTAL DEFECTS; CRYSTAL GROWTH; PHOTOLUMINESCENCE; SINGLE CRYSTALS; VACUUM APPLICATIONS;

FLAT-ZONE (FZ) SILICON;

SEMICONDUCTING SILICON;

EID: 0034450043     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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