20V and 8V lateral trench gate power MOSFETs with record-low on-resistance

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 197-200

  Kawaguchi, Yusuke ^a   Sano, Takeshi ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GATES (TRANSISTOR); POWER ELECTRONICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THREE DIMENSIONAL;

LATERAL TRENCH GATE; LDMOS TRANSISTOR; ON RESISTANCE;

MOSFET DEVICES;

EID: 0033307323     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)