High performance 300V IGBTs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 217-220

  Shenoy, P M ^a   Yedinak, J ^a   Gladish, J ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES; TEMPERATURE;

CONDUCTION LOSSES; MINORITY CARRIER LIFETIME; SWITCHING LOSSES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034448413     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Power semiconductor devices
2. Optimizing 600V punch-through (PT) IGBT's for unclamped inductive switching (UIS)
3. Harris new generation SMPS IGBT opens door for a new era in SMPS market
4. Ultra thin-wafer technology for a new 600V-NPT-IGBT
5. Electrothermal simulations in punchthrough and nonpunchthrough IGBT's