Optimizing 600V punchthrough IGBT's for unclamped inductive switching (UIS)

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 363-366

  Yedinak, J ^a   Wood, B ^a   Shenoy, P ^a   Dolny, G ^a   Lange, D ^a   Morthorst, T ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING;

AVALANCHE INDUCED SECOND BREAKDOWN; FAST SWITCHING; LOW ON STATE VOLTAGE; PUNCHTHROUGH INSULATED GATE BIPOLAR TRANSISTOR; UNCLAMPED INDUCTIVE SWITCHING;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034447744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Electrothermal simulations in punchthrough and nonpunchthrough IGBTs
2. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
3. Analysis on the self-clamp phenomea of IGBTs
4. Theoretical investigation of IGBT snubberless, self-clamped drain voltage switching-off operation under large inductive loads
5. Operation of an IGBT in a self-clamped inductive switching circuit (SCIS) for automotive ignition