Porous silicon refractive index lattices

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 443-446

  Uehara, S ^a   Taira, K ^a   Hashimoto, T ^a   Sasabu, H ^a   Matsubara, T ^a  

^a SEIKEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CURRENT DENSITY; ETCHING; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING;

ANODIZATION; REFRACTIVE INDEX LATTICES;

POROUS SILICON;

EID: 0034430821     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<443::AID-PSSA443>3.0.CO;2-W     Document Type: Article

References (14)

1. E. YABLONOVITCH, Phys. Rev. Lett. 58, 2059 (1987).
2. J. D. JANNOPOULOS, R. D. MEADE, and J. N. WINN, Photonic Crystals, University of Princeton Press, Princeton (NJ) 1995.
3. K. A. MCINTOSH, L. J. MAHONEY, K. M. MOLVAR, O. B. MCMAHON, S. VERGHESE, M. ROTHSCHILD, and E. R. BROWN, Appl. Phys. Lett. 70, 2937 (1997).
4. S. NODA, N. YAMAMOTO, and A. SASAKI, Jpn. J. Appl. Phys. 35, L909 (1996).
5. S. KAWAKAMI, Electron. Lett. 33, 260 (1997).
6. O. HANAMIZU, Y. OHTA, T. SATO, and S. KAWAKAMI, Appl. Phys. Lett. 74, 777 (1999).
7. H. KOSAKA, T. KAWASHIMA, A. NOTOMI, T. TAMURA, T. SATO, and S. KAWAKAMI, Appl. Phys. Lett. 74, 1370 (1999).
8. M. BERGER, C. DIEKER, M. THONISSEN, L. VESCANT, H. LUTH, H. MUNDER, W. THEUSS, M. WERNKE, and P. GROSSE, J. Phys. D 27, 1333 (1994).
9. G. VINCENT, Appl. Phys. Lett. 64, 2367 (1994).
10. C. MAZZOLENI and L. PAVESI, Appl. Phys. Lett. 67, 2983 (1995).
11. G. LORENDEL, M. THONISSEN, S. SETZ, R. ROMESTAIN, and J. C. VIAL, Mater. Res. Soc. Symp. Proc. 452, 631 (1997).
12. U. GRUNING, V. LEHMANN, and C. M. ENGELHARDT, Appl. Phys. Lett. 66, 3254 (1995).
13. U. GRUNING, V. LEHMANN, S. OTTOW, and K. BUSH, Appl. Phys. Lett. 68, 747 (1996).
14. S. UEHARA, T. KUBO, S. OGATA, T. SATO, J. HOSONO, and T. MATSUBARA, Mater. Res. Soc. Symp. Proc. 486, 119 (1998).