Laser-induced melting of porous silicon

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 325-330

  Timoshenko, V Yu ^a,b   Dittrich, Th ^a   Sieber, I ^c   Rappich, J ^c   Kamenev, B V ^b   Kashkarov, P K ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; COMPUTER SIMULATION; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS LASERS; MELTING; PHOTOLUMINESCENCE; POROSITY; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; THERMAL CONDUCTIVITY OF SOLIDS; ULTRAFAST PHENOMENA;

LASER INDUCED MELTING; LASER INDUCED MODIFICATION; TIME RESOLVED REFLECTIVITY METHOD; XENON CHLORINE LASER;

POROUS SILICON;

EID: 0034430567     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<325::AID-PSSA325>3.0.CO;2-#     Document Type: Article

References (21)

1. D. BÄUERLE, Chemical Processing with Lasers, Springer-Verlag, Berlin 1986.
2. D. BÄUERLE, phys. stat. sol. (a) 166, 543 (1998).
3. A. G. GULLIS, L. T. CANHAM, and P. D. J. CALCOTT, Appl. Phys. Lett. 82, 909 (1997).
4. B. HAMILTON, Semicond. Sci. Technol. 10, 1187 (1995).
5. S. BATISHCHE, V. BONDARENKO, A. DEMCHUK, A. KUZMUK, V. LABUNOV, G. LITVINOVICH, and V. MOSTOVNIKOV, Poverkh. Fiz. Khim. Mekh. 8, 44 (1992).
6. TH. DITTRICH, I. SIEBER, W. HENRION, S. RAUSCHER, N. WANDERKA, and J. RAPPICH, Appl. Phys. A 63, 467 (1996).
7. R. CARIUS, A. WOHLLEBE, L. HOUBEN, and H. WAGNER, phys. stat. sol. (a) 166, 635 (1999)
8. P. K. KASHKAROV, V. YU. TIMOSHENKO, N. G. CHECHENIN, and A. N. OBRAZTSOV, Laser Phys. 2, 790 (1992).
9. L. A. GOLOVAN, B. V. MARKOV, V. YU. TIMOSHENKO, and P. K. KASHKAROV, Solid State Commun. 108, 707 (1998).
10. A. N. OBRAZTSOV, H. OKUSHI, H. WATANABE, and V. YU. TIMOSHENKO, phys. stat. sol. (b) 203, 565 (1997).
11. G. GESELE, J. LINSMEIER, V. DRACH, J. FRICKE, and R. ARENS-FISCHER, J. Phys. D 30, 2911 (1997).
12. G. AMATO, G. BENEDETTO, L. BOARINO, N. BRUNETTO, and R. SPAGNOLO, Opt. Engng. 36, 423 (1997).
13. G. AMATO, R. ANGELUCCI, G. BENEDETTO, L. BOARINO, L. DORI, P. MACCAGNANI, A. M. ROSSI, and R. SPAGNOLO, J. Porous Semicond. 7, 183 (2000).
14. V. LYSENKO, S. PERICHON, B. REMAKI, D. BARBIER, and B. CHAMPAGNON, J. Appl. Phys. 86, 6841 (1999), and references therein.
15. V. LYSENKO, PH. ROUSSEL, B. REMAKI, G. DELHOMME, A. DITTMAR, D. BARBIER, V. STRIKHA, and C. MARTELET, J. Porous Semicond. 7, 177 (2000), and references therein.
16. S. L. LAI, J. Y. GUO, V. PETROVA, G. RAMANATH, and L. H. ALLEN, Phys. Rev. Lett. 77, 99 (1996).
17. A. ZANGWILL, Physics at Surface. Cambridge University Press, 1988.
18. S. BILLAT, M. THÖNISSEN, R. ARENS-FISHER, M. G. BERGER, M. KRÜGER, and H. LÜTH, Thin Solid Films 297, 22 (1997).
19. V. PETROVA-KOCH, A. KUX, F. MÜLLER, T. MUSCHIK, F. KOCH, and V. LEHMAN, Mater. Res. Soc. Symp. Proc. 256, 41 (1992).
20. A. PUSEL, U. WATTERAUER, and P. HESS, Phys. Rev. Lett. 81, 645 (1998).
21. C. G. VAN DE WALLE, Phys. Rev. B 49, 4579 (1994).