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Volumn 182, Issue 1, 2000, Pages 489-493
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Amorphous-porous silicon heterojunction for gas sensor application
a
ENEA CR Portici
(Italy)
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CHEMICAL SENSORS;
CURRENT VOLTAGE CHARACTERISTICS;
ETCHING;
FILM GROWTH;
PHOTOLUMINESCENCE;
POROUS SILICON;
SEMICONDUCTOR DIODES;
SUBSTRATES;
SURFACES;
TEMPERATURE;
THIN FILMS;
AMORPHOUS POROUS SILICON HETEROJUNCTION;
AMORPHOUS THIN FILM TECHNOLOGY;
GAS REACTIVITY;
HETEROJUNCTIONS;
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EID: 0034430438
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200011)182:1<489::AID-PSSA489>3.0.CO;2-T Document Type: Article |
Times cited : (2)
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References (9)
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