Deep diffusion doping of macroporous silicon

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 145-150

  Astrova, E V ^a   Voronkov, V B ^a   Grekhov, I V ^a   Nashchekin, A V ^a   Tkachencko, A G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; MULTILAYERS; PERMITTIVITY; PHOSPHORUS; POROSITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

DEEP DIFFUSION DOPING; FLAT DIFFUSION FRONT; MACROPOROUS SILICON; NONPOROUS CRYSTAL;

POROUS SILICON;

EID: 0034429962     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<145::AID-PSSA145>3.0.CO;2-#     Document Type: Article

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