Deep "cold" junctions by porous silicon impregnation

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 321-324

  Amato, G ^a   Boarino, L ^a   Brunetto, N ^a   Turnaturi, M ^b  

^a ISTITUTO ELETTROTECNICO NAZIONALE GALILEO FERRARIS   (Italy)

^b Intl Rectifier Corporation Italy   (Italy)

Author keywords

Anodic oxidation; Diffusion; Power devices; Silicon

Indexed keywords

ANODIC OXIDATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMISTRY; ETCHING; IMPREGNATION; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; TECHNOLOGY; THERMAL DIFFUSION;

DEEP COLD JUNCTIONS; ELECTROCHEMICAL IMPREGNATION; POROUS SILICON IMPREGNATION; SPREADING RESISTANCE;

SEMICONDUCTOR JUNCTIONS;

EID: 0031125199     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09424-2     Document Type: Article

References (9)

1. S. Yasuda and T. Tonezawa, Solid State Electron., 25 (5) (1982) 423-427
2. S. Ahmad and J. Akhtar, IEEE Electron Device Lett., EDL-6 (9) (1985) 465-467.
3. R. Stengl, U. Gösele, C. Fellinger, M. Beyer and S. Walesch, IEEE Trans. Electron Devices, ED-33 (3) (1986) 426-428.
4. P. Steiner and W. Lang, Thin Solid Films, 255 (1995) 52-58.
5. W. Theiss, S. Hilbrich, R. Arens-Fischer, M.G. Berger and H. Munder, in G. Amato, C. Delerue and H.J. von Bardeleben (eds.), Optical and Structural Properties of Porous Silicon Nanostructures, Gordon and Breach, London, 1996, to be published.
6. H. Yamanaka, M. Kamoshida and Y. Haneta, Jpn. J. Appl. Phys., 13 (10) (1974) 1661-1662.
7. P. Déhu, A. Senes, F. Miserey, Thin Solid Films, 255 (1995) 321-324.
8. M.J.J. Theunissen, J. Electrochem. Soc., 119 (1972) 351.
9. C. Levy-Clement, in J.C. Vial and J. Derrien (eds.), Porous Silicon Science and Technology, Proc. Winter School Les Houches, Les Editions de Phisique-Springer, Les Ulis, 1995.