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Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 413-418

1.54 μm electroluminescence from erbium-doped porous silicon composites for photonic applications

(2) Lopez, H A a Fauchet, P M a

a University of Rochester (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITE MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ERBIUM; HIGH TEMPERATURE EFFECTS; IONS; POROUS SILICON; QUANTUM EFFICIENCY; TRANSPORT PROPERTIES;

BIAS; CATHODIC ELECTROCHEMICAL MIGRATION; ERBIUM DOPED POROUS SILICON COMPOSITES; ERBIUM DOPED POROUS SILICON DEVICES;

OPTOELECTRONIC DEVICES;

EID: 0034428877 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200011)182:1<413::AID-PSSA413>3.0.CO;2-7 Document Type: Article

Times cited : (11)

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