Room-temperature electroluminescence from erbium-doped porous silicon composites for infrared LED applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3942, Issue , 2000, Pages 87-96

  Lopez, Herman A ^a   Fauchet, Philippe M ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ELECTRON TRANSPORT PROPERTIES; ERBIUM; INFRARED DEVICES; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; NONMETALLIC MATRIX COMPOSITES; POROUS SILICON; QUANTUM EFFICIENCY;

CATHODIC ELECTROCHEMICAL MIGRATION; ELECTROCHEMICAL DOPING;

OPTICAL MATERIALS;

EID: 0033729413     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.382845     Document Type: Conference Paper

References (31)