SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 135-140

Integration of multilayers in Er-doped porous silicon structures and advances in 1.5 um optoelectronic devices

(6) Lopez, H A a Chan, S b Tsybeskov, L b Koyama, H b Bondarenko, V P c Fauchet, P M c

a UNIVERSITY OF ROCHESTER (United States)

b University of Rochester (United States)

c BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; ERBIUM; ETCHING; MULTILAYERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR DOPING;

BAND EDGE RECOMBINATION; ERBIUM DOPED POROUS SILICON; HIGH REFLECTIVITY; INFRARED PHOTOLUMINESCENCE;

POROUS SILICON;

EID: 0032591597 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (6)

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