A novel nanoscale metal transistor fabricated by conventional photolithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7233-7236

  Fukushima, Kiyoshi ^a   Sasajima, Ryouta ^a   Fujimaru, Kouji ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Fowler Nordheim tunneling; MITT; Photolithography; Short channel effect; Ti TiOx tunnel junction; ULSI

Indexed keywords

ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; PHOTOLITHOGRAPHY; TUNNEL JUNCTIONS; ULSI CIRCUITS;

FOWLER-NORDHEIM TUNNELING; METAL/INSULATOR TUNNEL TRANSISTORS (MITT); SHORT CHANNEL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0033326760     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7233     Document Type: Article

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