Quantum confined electronic states in InGaN dots embedded in GaN: Tight-binding calculation

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 285-290

  Saito, T ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; GALLIUM NITRIDE; MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM DOTS;

ATOMIC POSITIONS; INDIUM GALLIUM NITRIDE; VALENCE FORCE FIELD METHOD;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034425088     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)