Charged residues in surface-located loops influence voltage gating of porin from haemophilus influenzae type b

Journal of Membrane Biology

Volumn 178, Issue 3, 2000, Pages 185-193

  Arbing, M A ^a   Dahan, D ^a   Boismenu, D ^a   Mamer, O A ^a   Hanrahan, J W ^a   Coulton, J W ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

Haemophilus influenzae type b; Ion channel; Porin; Voltage gating

Indexed keywords

ION CHANNEL; PORIN;

ARTICLE; BACTERIAL OUTER MEMBRANE; CHANNEL GATING; CHEMICAL MODIFICATION; HAEMOPHILUS INFLUENZAE TYPE B; NONHUMAN; PROTEIN PURIFICATION;

AMINO ACID SEQUENCE; CELL MEMBRANE PERMEABILITY; ELECTRIC CONDUCTIVITY; HAEMOPHILUS INFLUENZAE; ION CHANNEL GATING; LIPID BILAYERS; LYSINE; MODELS, MOLECULAR; MOLECULAR SEQUENCE DATA; MOLECULAR WEIGHT; PEPTIDE MAPPING; PORINS; PROTEIN CONFORMATION; PROTEIN STRUCTURE, TERTIARY; SPECTROMETRY, MASS, ELECTROSPRAY IONIZATION; SPECTROMETRY, MASS, MATRIX-ASSISTED LASER DESORPTION-IONIZATION; STRUCTURE-ACTIVITY RELATIONSHIP; SUCCINIC ACID;

BACTERIA (MICROORGANISMS); HAEMOPHILUS; HAEMOPHILUS INFLUENZAE SEROTYPE B;

EID: 0034387881     PISSN: 00222631     EISSN: None     Source Type: Journal    
DOI: 10.1007/s002320010026     Document Type: Article

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