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1
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0000113738
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Amplitude squeezing in a pump-noise-suppressed laser oscillator
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Y. Yamamoto, S. Machida, and O. Nilason, "Amplitude squeezing in a pump-noise-suppressed laser oscillator," Phys. Rev. A 34, 4025-4042 (1986) ; Y. Yamamoto and S. Machida, "High-impedance suppression of pump fluctuation and amplitude squeezing in semiconductor lasers," Phys. Rev. A 35, 5114-5130 (1987).
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(1986)
Phys. Rev. A
, vol.34
, pp. 4025-4042
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Yamamoto, Y.1
Machida, S.2
Nilason, O.3
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2
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0347202482
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High-impedance suppression of pump fluctuation and amplitude squeezing in semiconductor lasers
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Y. Yamamoto, S. Machida, and O. Nilason, "Amplitude squeezing in a pump-noise-suppressed laser oscillator," Phys. Rev. A 34, 4025-4042 (1986) ; Y. Yamamoto and S. Machida, "High-impedance suppression of pump fluctuation and amplitude squeezing in semiconductor lasers," Phys. Rev. A 35, 5114-5130 (1987).
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(1987)
Phys. Rev. A
, vol.35
, pp. 5114-5130
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Yamamoto, Y.1
Machida, S.2
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3
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5244280456
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Observation of amplitude squeezing in a constant-current-driven semiconductor laser
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S. Machida, Y. Yamamoto, and Y. Itaya, "Observation of amplitude squeezing in a constant-current-driven semiconductor laser," Phys. Rev. Lett. 58, 1000-1003 (1987).
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(1987)
Phys. Rev. Lett.
, vol.58
, pp. 1000-1003
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Machida, S.1
Yamamoto, Y.2
Itaya, Y.3
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4
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0001570071
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Ultrabroadband amplitude squeezing in a semiconductor laser
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S. Machida and Y. Yamamoto, "Ultrabroadband amplitude squeezing in a semiconductor laser," Phys. Rev. Lett. 60, 792-794 (1988).
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(1988)
Phys. Rev. Lett.
, vol.60
, pp. 792-794
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Machida, S.1
Yamamoto, Y.2
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5
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0000449540
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Squeezed photon-number noise and sub-Poissonian electrical partition noise in a semiconductor laser
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W. H. Richardson, S. Machida, and Y. Yamamoto, "Squeezed photon-number noise and sub-Poissonian electrical partition noise in a semiconductor laser," Phys. Rev. Lett. 66, 2867-2870 (1991).
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(1991)
Phys. Rev. Lett.
, vol.66
, pp. 2867-2870
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Richardson, W.H.1
Machida, S.2
Yamamoto, Y.3
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6
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0033096946
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Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed light generation
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S. Lathi, K. Tanaka, T. Monta, S. Inoue, H. Kan, and Y. Yamamoto, "Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed light generation," IEEE J. Quantum Electron. 35, 387-394 (1999).
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(1999)
IEEE J. Quantum Electron.
, vol.35
, pp. 387-394
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Lathi, S.1
Tanaka, K.2
Monta, T.3
Inoue, S.4
Kan, H.5
Yamamoto, Y.6
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7
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0033243374
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Room-temperature generation of amplitude-squeezed light from 1550-nm distributed feedback semiconductor lasers
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and the references therein
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To date, there have been also several reports on the sub-Poissonian light generation from LD's with recourse to optical feedback techniques. See, for example, F. Jérémie, C. Chabran, and P. Gallion, "Room-temperature generation of amplitude-squeezed light from 1550-nm distributed feedback semiconductor lasers," J. Opt. Soc. Am. B 16, 460464 (1999) and the references therein.
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(1999)
J. Opt. Soc. Am. B
, vol.16
, pp. 460-464
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Jérémie, F.1
Chabran, C.2
Gallion, P.3
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8
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0023401987
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Generation of sub-Poissonian light by high-efficiency light-emitting diodes
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P. R. Tapster, J. G. Rarity, and J. S. Satchell, "Generation of sub-Poissonian light by high-efficiency light-emitting diodes," Europhys. Lett. 4, 293-299 (1987).
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(1987)
Europhys. Lett.
, vol.4
, pp. 293-299
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Tapster, P.R.1
Rarity, J.G.2
Satchell, J.S.3
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9
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0001925015
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Sub-Poisson light from GaAlAs infrared emitting diodes
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P. J. Edwards, "Sub-Poisson light from GaAlAs infrared emitting diodes," Int. J. Optoelectron. 6, 23-28 (1991).
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(1991)
Int. J. Optoelectron.
, vol.6
, pp. 23-28
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Edwards, P.J.1
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10
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0001119264
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Macroscopic Coulomb blockade effect in a constant-current-driven light-emitting diode
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J. Kim, H. Kan, and Y. Yamamoto, "Macroscopic Coulomb blockade effect in a constant-current-driven light-emitting diode," Phys. Rev. B 52, 2008-2012 (1995).
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(1995)
Phys. Rev. B
, vol.52
, pp. 2008-2012
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Kim, J.1
Kan, H.2
Yamamoto, Y.3
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11
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0031251374
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3-dB wideband squeezing in photon-number fluctuations from a light-emitting diode
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G. Shinozaki, J. Abe, T. Hirano, T. Kuga, and M. Yamanishi, "3-dB wideband squeezing in photon-number fluctuations from a light-emitting diode," Jpn. J. Appl. Phys., Part 1 36, 6350-6352 (1997).
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(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 6350-6352
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-
Shinozaki, G.1
Abe, J.2
Hirano, T.3
Kuga, T.4
Yamanishi, M.5
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12
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0031164061
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Observation of the collective Coulomb blockade effect in a constant-current-driven high-speed light-emitting diode
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J. Abe, G. Shinozaki, T. Hirano, T. Kuga, and M. Yamanishi, "Observation of the collective Coulomb blockade effect in a constant-current-driven high-speed light-emitting diode," J. Opt. Soc. Am. B 14, 1295-1298 (1997).
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(1997)
J. Opt. Soc. Am. B
, vol.14
, pp. 1295-1298
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-
Abe, J.1
Shinozaki, G.2
Hirano, T.3
Kuga, T.4
Yamanishi, M.5
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13
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0031647893
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Wideband suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source
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M. Kobayashi, M. Kohno, Y. Kadoya, M. Yamanishi, J. Abe, and T. Hirano, "Wideband suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source," Appl. Phys. Lett. 72, 284-286 (1998).
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(1998)
Appl. Phys. Lett.
, vol.72
, pp. 284-286
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-
Kobayashi, M.1
Kohno, M.2
Kadoya, Y.3
Yamanishi, M.4
Abe, J.5
Hirano, T.6
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14
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0009204167
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Scheme for generation of sub-Poissonian photons: Antibunching of emission events by population-dependent spontaneous-emission lifetime in semiconductor microcavities
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M. Yamanishi and Y. Lee, "Scheme for generation of sub-Poissonian photons: antibunching of emission events by population-dependent spontaneous-emission lifetime in semiconductor microcavities," Phys. Rev. A 48, R2534-R2537 (1993); M. Yamanishi, K. Watanabe, N. Jikutani, and M. Ueda, "Sub-Poissonian photon-state generation by Stark-effect blockade of emissions in a semiconductor diode driven by a constant-voltage source," Phys. Rev. Lett. 76, 3432-3435 (1996).
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(1993)
Phys. Rev. A
, vol.48
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Yamanishi, M.1
Lee, Y.2
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15
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4244139753
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Sub-Poissonian photon-state generation by Stark-effect blockade of emissions in a semiconductor diode driven by a constant-voltage source
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M. Yamanishi and Y. Lee, "Scheme for generation of sub-Poissonian photons: antibunching of emission events by population-dependent spontaneous-emission lifetime in semiconductor microcavities," Phys. Rev. A 48, R2534-R2537 (1993); M. Yamanishi, K. Watanabe, N. Jikutani, and M. Ueda, "Sub-Poissonian photon-state generation by Stark-effect blockade of emissions in a semiconductor diode driven by a constant-voltage source," Phys. Rev. Lett. 76, 3432-3435 (1996).
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(1996)
Phys. Rev. Lett.
, vol.76
, pp. 3432-3435
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Yamanishi, M.1
Watanabe, K.2
Jikutani, N.3
Ueda, M.4
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16
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0031145542
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Squeezed light generated by a microcavity laser
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Another approach may be to use a vertical-cavity surface emitting laser (VCSEL). Recently, the photon-number squeezing has been demonstrated with VCSEL's driven at injection currents in the mA range. [D. C. Kliper, P. A. Roos, J. L. Carlsten, and K. L. Lear, "Squeezed light generated by a microcavity laser," Phys. Rev. A 55, R3323-R3326 (1997); D. Wiedenmann, P. Schnitzer, C. Jung, M. Grabhen, R. Jäger, R. Michalzik, and K. J. Ebeling, "Noise characteristics of 850 nm single-mode vertical cavity surface emitting lasers," Appl. Phys. Lett. 73, 717-719 (1998).] However, to achieve the squeezing at lower injection levels, further reduction of the threshold current for the lasing is necessary, because, generally in LD's, the sub-Poissonian lights are obtained only when the injection level is sufficiently higher than the threshold for the lasing.
-
(1997)
Phys. Rev. A
, vol.55
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Kliper, D.C.1
Roos, P.A.2
Carlsten, J.L.3
Lear, K.L.4
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17
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0000497339
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Noise characteristics of 850 nm single-mode vertical cavity surface emitting lasers
-
Another approach may be to use a vertical-cavity surface emitting laser (VCSEL). Recently, the photon-number squeezing has been demonstrated with VCSEL's driven at injection currents in the mA range. [D. C. Kliper, P. A. Roos, J. L. Carlsten, and K. L. Lear, "Squeezed light generated by a microcavity laser," Phys. Rev. A 55, R3323-R3326 (1997); D. Wiedenmann, P. Schnitzer, C. Jung, M. Grabhen, R. Jäger, R. Michalzik, and K. J. Ebeling, "Noise characteristics of 850 nm single-mode vertical cavity surface emitting lasers," Appl. Phys. Lett. 73, 717-719 (1998).] However, to achieve the squeezing at lower injection levels, further reduction of the threshold current for the lasing is necessary, because, generally in LD's, the sub-Poissonian lights are obtained only when the injection level is sufficiently higher than the threshold for the lasing.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 717-719
-
-
Wiedenmann, D.1
Schnitzer, P.2
Jung, C.3
Grabhen, M.4
Jäger, R.5
Michalzik, R.6
Ebeling, K.J.7
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18
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0001018835
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Noise suppression in semiconductor p-i-n junctions: Transition from macroscopic squeezing to mesoscopic Coulomb blockade of electron emission processes
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A. Imamoḡlu and Y. Yamamoto, "Noise suppression in semiconductor p-i-n junctions: transition from macroscopic squeezing to mesoscopic Coulomb blockade of electron emission processes," Phys. Rev. Lett. 70, 3327-3330 (1993).
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(1993)
Phys. Rev. Lett.
, vol.70
, pp. 3327-3330
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-
Imamoglu, A.1
Yamamoto, Y.2
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19
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0000668662
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Theory of noise in p-n junction light emitters
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J. Kim and Y. Yamamoto, "Theory of noise in p-n junction light emitters," Phys. Rev. B 55, 9949-9959 (1997).
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(1997)
Phys. Rev. B
, vol.55
, pp. 9949-9959
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Kim, J.1
Yamamoto, Y.2
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20
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0001603820
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Influence of the backward-pump process on photonnumber squeezing in a constant-current-driven heterojunction LED: Transition from thermionic emission to diffusion limits
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M. Kobayashi, M. Yamanishi, H. Sumitomo, and Y. Kadoya, "Influence of the backward-pump process on photonnumber squeezing in a constant-current-driven heterojunction LED: transition from thermionic emission to diffusion limits," Phys. Rev. B 80, 16686-16700 (1999).
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(1999)
Phys. Rev. B
, vol.80
, pp. 16686-16700
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-
Kobayashi, M.1
Yamanishi, M.2
Sumitomo, H.3
Kadoya, Y.4
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21
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0000937981
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Photon number-squeezed recombination radiation in semiconductors
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M. C. Teich, F. Capasso, and B. E. A. Saleh, "Photon number-squeezed recombination radiation in semiconductors," J. Opt. Soc. Am. B 4, 1663-1666 (1987).
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(1987)
J. Opt. Soc. Am. B
, vol.4
, pp. 1663-1666
-
-
Teich, M.C.1
Capasso, F.2
Saleh, B.E.A.3
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22
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0032677587
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Squeezing in photon-number fluctuations due to backward pump process without high impedance-noise-suppression in a light-emitting-diode
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Quantum Electronics and Laser Science Conference, (Optical Society of America, Washington, D.C.), paper QWE3
-
H. Sumitomo, Y. Kadoya, and M. Yamanishi, "Squeezing in photon-number fluctuations due to backward pump process without high impedance-noise-suppression in a light-emitting-diode," in Quantum Electronics and Laser Science Conference, 1999 DSA Technical Digest Series (Optical Society of America, Washington, D.C., 1999), paper QWE3, p. 142.
-
(1999)
1999 DSA Technical Digest Series
, pp. 142
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Sumitomo, H.1
Kadoya, Y.2
Yamanishi, M.3
-
23
-
-
0016917534
-
Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
-
H. C. Casey, Jr., and F. Stern, "Concentration-dependent absorption and spontaneous emission of heavily doped GaAs," J. Appl. Phys. 47, 631-643 (1976).
-
(1976)
J. Appl. Phys.
, vol.47
, pp. 631-643
-
-
Casey H.C., Jr.1
Stern, F.2
-
24
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-
0141869603
-
Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9-nm GaAs/0.9-nm AlGaAs) as barrier layers
-
H. Sakaki, M. Tsuchiya, and J. Yoshino, "Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9-nm GaAs/0.9-nm AlGaAs) as barrier layers," Appl. Phys. Lett. 47, 295-297 (1985).
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 295-297
-
-
Sakaki, H.1
Tsuchiya, M.2
Yoshino, J.3
-
25
-
-
84893990674
-
-
note
-
c ∼ 220 meV is sufficiently larger than the thermal energy, ≃26 meV.
-
-
-
-
26
-
-
0009204165
-
-
Academic, New York, Part A, Chap. 3
-
For instance, H. C. Casey, Jr., and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Part A, Chap. 3, p. 161.
-
(1978)
Heterostructure Lasers
, pp. 161
-
-
Casey H.C., Jr.1
Panish, M.B.2
|